Gate Driver

Behavioral model of gate driver integrated circuit

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  • Library:

  • Simscape / Electrical / Semiconductors & Converters

  • Gate Driver block

Description

The Gate Driver block provides an abstracted representation of a gate driver integrated circuit. The block models input hysteresis, propagation delay, and turn-on/turn-off dynamics. Unless modeling a gate driver circuit explicitly, always use this block or the Half-Bridge Driver block to set gate-source voltage on a MOSFET block or gate-emitter voltage on an IGBT block. Do not connect a controlled voltage source directly to a semiconductor gate, because this omits the gate driver output impedance that determines switching dynamics.

The Gate Driver block has two modeling variants, accessible by right-clicking the block in your block diagram and then selecting the appropriate option from the context menu, under Simscape > Block choices:

  • PS input — The driver output state is controlled by a physical signal input u. Use this variant if all of your controller, including PWM waveform generation, is determined by Simulink® blocks. This modeling variant is the default.

  • Electrical input ports — The driver output state is controlled by two electrical input connections, PWM and REF. Use this variant if your model has upstream analog components, such as the Controlled PWM Voltage source.

When the input rises above the logic 1 input level, the transition of the output state from off to on is initiated after a delay equal to the turn-on propagation delay. The demanded output voltage across the G and S ports steps in value from the off-state output voltage to the on-state output voltage, but the actual output voltage is set by the RC time constant associated with the On-state gate drive resistance value and the total load capacitance. Similarly, when the input falls below the logic 0 input value, the transition of the output state from on to off is initiated after a delay equal to the turn-off propagation delay and with dynamics now set by the Off-state gate drive resistance value.

Faults

You can insert a fault into the output of the gate driver at a specified simulation time, to make the connected semiconductor device either permanently off or permanently on. Use this feature to represent a failed semiconductor device as failed at open-circuit or at normal on-state conditions.

Ports

Input

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Input physical signal that specifies the input control value.

Dependencies

Enabled for the PS input variant of the block.

Conserving

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Electrical conserving port associated with the pulse-width modulated signal.

Dependencies

Enabled for the Electrical input ports variant of the block.

Electrical conserving port associated with the floating zero volt reference.

Dependencies

Enabled for the Electrical input ports variant of the block.

Electrical conserving port associated with the gate. Connect this port to the gate of a MOSFET or IGBT block.

Electrical conserving port associated with the source or emitter. Connect this port to the source of a MOSFET block or the emitter of an IGBT block.

Parameters

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Input Logic

Value of the input signal corresponding to the logic 1 level.

Dependencies

Enabled for the PS input variant of the block.

Value of the input signal corresponding to the logic 0 level.

Dependencies

Enabled for the PS input variant of the block.

Value of the input voltage corresponding to the logic 1 level.

Dependencies

Enabled for the Electrical input ports variant of the block.

Value of the input voltage corresponding to the logic 0 level.

Dependencies

Enabled for the Electrical input ports variant of the block.

Outputs

Demanded output voltage when the driver is in on state.

Demanded output voltage when the driver is in off state.

Timing

When the input rises above the logic 1 input level, the transition of the output state from off to on is initiated after a delay equal to the turn-on propagation delay.

When the input falls below the logic 0 input value, the transition of the output state from on to off is initiated after a delay equal to the turn-off propagation delay.

Dynamics

Select the type of driver parameterization:

  • Output impedance — Specify on-state and off-state gate drive resistances.

  • Rise and fall times — Specify rise time, fall time, and load capacitance.

Gate drive resistance when the driver is in on state.

Dependencies

Enabled when the Parameterization parameter is set to Output impedance.

Gate drive resistance when the driver is in off state.

Dependencies

Enabled when the Parameterization parameter is set to Output impedance.

Driver rise time from 10% to 90%.

Dependencies

Enabled when the Parameterization parameter is set to Rise and fall times.

Driver fall time from 90% to 10%.

Dependencies

Enabled when the Parameterization parameter is set to Rise and fall times.

Driver load capacitance.

Dependencies

Enabled when the Parameterization parameter is set to Rise and fall times.

Faults

Select Yes to enable faults modeling. The associated parameters in the Faults section become visible to let you specify time to fail and the failure mode.

Set the simulation time at which you want the block to enter the faulted state.

Dependencies

Enabled when the Enable faults parameter is set to Yes.

Select whether driver fails by making the connected semiconductor device permanently turned off or on.

Dependencies

Enabled when the Enable faults parameter is set to Yes.

Model Examples

HEV PMSM Drive Test Harness

HEV PMSM Drive Test Harness

A test harness for a Permanent Magnet Synchronous Motor (PMSM) drive sized for use in a typical hybrid vehicle. The test harness can be used to determine overall drive losses when operating at a given speed and torque. Tabulated losses information from this test harness can then be used by the Simscape™ Electrical™ Motor & Drive (System Level) block for rapid simulation of complete drive cycles whilst still accurately predicting overall system efficiency.

IGBT Dynamic Characteristics

IGBT Dynamic Characteristics

How the dynamic characteristics of an IGBT depend on its parameters. A prerequisite to matching dynamic characteristics to datasheet values or measured data is to set the parameters defining the static I-V curve. For this, see the 'IGBT Characteristics' example, ee_igbt. With static parameters correctly set, the dynamic parameters can then be set as follows:

Extended Capabilities

C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.

See Also

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Introduced in R2017b

Simscape Electrical Documentation

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